MJF18008 Overview
Description
With TO-220F package - High voltage ,high speed APPLICATIONS - Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 10 16 4 8 45 150 -65~150 UNIT V V V A A A A W SYMBOL Rth j-C Rth j-A PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=2A; IB=0.2A TC=125 IC=4.5A; IB=0.9A TC=125 IC=2A ;IB=0.2A IC=4.5A; IB=0.9A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IC=2A ; VCE=1V IC=10mA ; VCE=5V IC=0.5A ; VCE=10V; f=1MHz IE=0; VCB=10V; f=1MHz 14 6 11 10 MIN 450 MJF18008 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 TYP. MAX UNIT V 0.6 0.65 0.7 0.8 1.10 1.25 0.1 0.5 0.1 0.1 0.1 34 V V V V ICES Collector cut-off current mA mA m.
