MJF18002 Overview
Description
With TO-220F package - High voltage ,high speed APPLICATIONS - Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 2 5 0.5 1.0 40 150 -65~150 UNIT V V V A A A A W SYMBOL Rth j-C Rth j-A PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=0.4A ;IB=40mA TC=125 IC=1A ;IB=0.2A TC=125 IC=0.4A ;IB=40mA IC=1A ;IB=0.2A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=0.2A ; VCE=5V IC=0.4A ; VCE=1V IC=1A ; VCE=1V IC=10mA ; VCE=5V IC=0.5A ; VCE=10V;f=1.0MHz IE=0 ; VCB=10V;f=1.0MHz 14 11 6 10 MIN 450 MJF18002 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 TYP. MAX UNIT V 0.5 0.5 0.5 0.6 1.1 1.25 0.1 0.5 0.1 0.1 0.1 34 V V V V ICES Collector cut-off current mA mA mA 6.5.
