Datasheet Details
| Part number | MJF18002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.08 KB |
| Description | NPN Transistor |
| Download | MJF18002 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJF18002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.08 KB |
| Description | NPN Transistor |
| Download | MJF18002 Download (PDF) |
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·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current 1 A IBM Base Current-Peak 2 A PD Total Power Dissipation@TC=25℃ 25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 5.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W MJF18002 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJF18002 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage CONDITIONS IC=30mA;
IB= 0 IC= 0.4A ;IB= 40mA TC=125℃ IC= 1A ;IB= 0.2A TC=125℃ IC= 0.4A;
IB= 40mA MIN TYP MAX UNIT 450 V 0.5 0.5 V 0.5 0.6 V 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJF18002 | POWER TRANSISTOR | Motorola |
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MJF18002 | SILICON POWER TRANSISTOR | SavantIC |
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