| Part Number | MJF18002 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18002/D
™ Data Sheet SWITCHMODE™
Designer's
NPN Bipolar Power Transistor For Switching Power Supply Applications
The MJE/MJF18002 ha.
R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Operating and Storage Temperature Test No. 1 Per Fig. 1 Test No. 2 Per Fig. 2 Test No. 3 Per Fig. 3 (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL * * * 50 0.4 MJE18002 MJF18002 Unit Vdc Vdc Vdc Adc Adc 4500 3500 1500 25 0.2 V . |
MJF18002 Datasheet and Specifications PDF
The MJF18002 is a POWER TRANSISTOR.
| Part Number | MJF18002 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 22. con NPN Power Transistor MJF18002 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation V. |
| Part Number | MJF18002 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING PIN 1 2 3 Base Collector Emitter Fig. ion Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=0. |