NS50A Overview
Description
With TO-220C package - Complement to type NS50B APPLICATIONS - For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Pulse TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -60 -6 -6 -10 65 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ; IB=-0.4A VCB=-100V; IE=0 VCE=-60V; IB=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-10V 100 3 MIN -60 TYP. NS50A SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT MAX UNIT V -1.0 -1.5 -10 -0.1 -10 160 V V µA mA µA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE NS50A Fig.2 Outline dimensions 3.
