NS50P Overview
Description
With TO-220C package - Complement to type NS50N APPLICATIONS - For medium power linear amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Pulse Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -6 -10 -2 65 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IC=-6A ;IB=-0.6A IC=-6A ; VCE=-4V VCE=-60V; VEB=0 VCE=-30V; IB=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 50 15 3 MIN -60 TYP. NS50P SYMBOL VCEO(SUS) VCE(sat) VBE ICES ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V -1.5 -2.0 -0.4 -0.7 -1.0 160 V V mA mA mA MHz hFE-1 Classifications A 50-100 B 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE NS50P Fig.2 Outline dimensions 3.
