NS50B Overview
Description
With TO-220C package - Complement to type NS50A APPLICATIONS - For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION NS50B SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Pulse TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open emitter Open base Open collector CONDITIONS VALUE 100 60 5 6 10 65 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA; IB=0 IC=4A; IB=0.4A IC=4A; IB=0.4A VCB=100V; IE=0 VCE=60V; IB=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=0.5A ; VCE=10V 100 3 MIN 60 TYP. NS50B SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT MAX UNIT V 1.0 1.5 10 0.1 10 160 V V µA mA µA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE NS50B Fig.2 Outline dimensions 3.
