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2N6716 - NPN Plastic Encapsulated Transistor

Key Features

  • High Voltage：VCEO = 100V.
  • Gain of 20 @ IC = 0.5A RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector.
  •   Base  Emitter TO-92 GH J AD B K E CF Emitter Base.
  • Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
2N6717 NPN Plastic Encapsulated Transistor
2N6718 NPN Plastic Encapsulated Transistor
2N6517 NPN Plastic Encapsulated Transistor
2N6520 PNP Plastic Encapsulated Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor FEATURES  High Voltage：VCEO = 100V  Gain of 20 @ IC = 0.5A RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector   Base  Emitter TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.