SeCoS Halbleitertechnologie GmbH 2SC2412
NPN Epitaxial Planar Transistor
| Part No. | 2SC2412 |
|---|---|
| Datasheet | 2SC2412 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 60 50 7 150 200 150, -55 ~ 150 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob 60 - - V IC=50µA, IE=0 50 - - V IC=1mA, IB=0 7 - - V IE=50µA, IC=0 - - 0.1 µA VCB=60V, IE=0 - - 0.1 µA VEB=7V, IC=0 120 - 560 VCE=6V, IC=1mA - - 0.4 V IC=50mA, IB=5mA - 160 - MHz VCE=12V, IC= -2mA, f=100MHz - 2.0 3.5 pF VCB=12V, IE=0, f=1MHz 18-Feb-2011 Rev.
