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2SC3052 - NPN Silicon Plastic-Encapsulate Transistor

Key Features

  • n Top View 1 D G H J K L S V Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) V G n n C D H K J All Dimension in mm.

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2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L 1.BASE 2.EMITTER 3 B C B S 2 FEATURES n Top View 1 D G H J K L S V Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.