SeCoS Halbleitertechnologie GmbH A42
NPN Transistor
| Part No. | A42 |
|---|---|
| Datasheet | A42 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 1 2 3 1 23 1. EMITTER 2. BASS 3 . COLLECTORELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) HFE(3) VCE(sat) VBE(sat) fT Ic= 100µA, IE=0 Ic= 1mA, IB=0 IE= 100µA, IC=0 VCB= 200 V, IE=0 VEB= 5V, IC=0 VCE= 10 V, IC= 1 mA VCE= 10V, IC = 10 mA VCE= 10 V, IC=30 mA IC= 20 mA, IB= 2 mA IC= 20mA, IB= 2 mA VCE=20 V, IC= 10 mA f =30MHz 300 300 5 60 80 75 50 MAX 0.25 0.1 250 0.2 0.9 UNIT V V V µA µA V V MHz CLASSIFICATION OF hFE(2) Rank A Range 80-100 B1 100-150 B2 150-200 C 200-250 01-Jun-2002 Rev.
