TGS A42
NPN Transistor
| Part No. | A42 |
|---|---|
| Datasheet | A42 Download |
| Manufacturer |  TGS |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
High voltage 1. EMITTERMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units 2. BASE 3. COLLECTOR VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 300 V 300 V VEBO IC PC Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation 5V 500 mA 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mWELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO IC=100uA, IE=0 IC=1mA, IB=0 300 300 Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 Collector cut-off current Emitter cut-off current ICBO IEBO VCB=200V, IE=0 VEB=5V, IC=0 DC current gain hFE(1) hFE(2) VCE=10V, IC=1mA VCE=10V, IC=10mA 60 80 Collector-emitter saturation voltage hFE(3) VCE(sat) VCE=10V, IC=30mA IC=20mA,...
