Download BCX51 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
BCX51
Features 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 -1 -45 W (Tamb=25o C) A V Operating and storage junction temperature range TJ, Tstg: -55o C to +150o C 3.94~4.25 0.9~1.1 SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 0.36~0.56 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Dimensision in Millimeter ELECTRICAL CHARACTERISTICS (Tamb=25 o C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-100µA, IE=0 IC= -1m A , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -45 V -45 V -5 V -0.1 µA -0.1 µA DC current gain BCX51 BCX51-10 BCX51-16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency h FE(1) h FE(2) h FE(3) VCE(sat) VBE(ON) VCE=-2V, IC=-150m A VCE=-2V, IC=- 5m A VCE=-2V, IC=-...