BCX55 Datasheet PDF

FEATURES

1 2 3 1.BASE 2.COLLECTOR 3.EMITTER SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 3.94~4.25 Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 60 W (Tamb=25oC) A V Operating and storage junction temperature range TJ, Tstg: -55 oCto +150oC 0.9~1.1 0.36~0.56 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Dimensision in Millimeter

ELECTRICAL CHARACTERISTICS

(Tamb=25 oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=100µA, IE=0 IC= 10mA , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 MIN MAX UNIT 60 V 60 V 5V 0.1 µA 0.1 µA DC current gain BCX55 BCX55-10 BCX55-16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency hFE(1) VCE=2V, IC= 150mA 63 250 63 160 100 250 hFE(2) hFE(3) VCE=2V, IC= 5mA VCE=2V, IC= 500mA 40 25 VCE(sat) IC=500 mA, IB= 50mA 0.5 VBE(ON) IC= 500 mA, VCE=2V 1 V V fT VCE= 10V, IC= 50mA f = 100MHz 130 MHz DEVICE MARKING BCX55=BE BCX55-10=BG BCX55-16=BM 01-Jun-2002 Rev.