Download BCX55 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
BCX55
Features 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 3.94~4.25 Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 60 W (Tamb=25o C) A V Operating and storage junction temperature range TJ, Tstg: -55 o Cto +150o C 0.9~1.1 0.36~0.56 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Dimensision in Millimeter ELECTRICAL CHARACTERISTICS (Tamb=25 o C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=100µA, IE=0 IC= 10m A , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 MIN MAX UNIT 60 V 60 V 5V 0.1 µA 0.1 µA DC current gain BCX55 BCX55-10 BCX55-16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency h FE(1) VCE=2V, IC= 150m A 63 250 63 160 100 250 h FE(2) h FE(3) VCE=2V, IC= 5m A VCE=2V, IC= 500m...