FEATURES
1 2 3 1.BASE 2.COLLECTOR 3.EMITTER SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 3.94~4.25 Power dissipation PCM: 0.5 W (Tamb=25oC) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 45 V Operating and storage junction temperature range TJ, Tstg: -55 oC to +150 oC 0.9~1.1 0.36~0.56 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Dimensision in Millimeter ELECTRICAL CHARACTERISTICS
(Tamb=25oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=100µA , IE=0 IC= 1mA , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 MIN MAX UNIT 45 V 45 V 5V 0.1 µA 0.1 µA DC current gain BCX54 BCX54-10 BCX54-16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency hFE (1) VCE=2V, IC= 150mA 63 250 63 160 100 250 hFE(2) hFE(3) VCE=2V, IC= 5mA VCE=2V, IC= 500mA 40 25 VCE(sat) IC=500 mA, IB= 50mA 0.5 VBE(ON) IC= 500 mA, VCE=2V 1 V V fT VCE= 10V, IC= 50mA f = 100MHz 130 MHz DEVICE MARKING 01-Jun-2002 Rev.