Download CZD5706 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
CZD5706
CZD5706 is NPN Epitaxial Silicon Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION The CZD5706 is designed for high current switching application. ..net D-Pack (TO-252) Features - - - - Large Current Capacitance Low Collector to Emitter Saturation Voltage High-Speed Switching High Allowable Power Dissipation Collector MARKING 2 5706 Date Code Base Emitter SWITCHING TIME TEST CIRCUIT REF. A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.20 2.40 0.40 0.60 6.40 7.35 2.20 3.00 5.40 5.80 0.60 1.20 REF. J K L M N O P Millimeter Min. Max. 2.30 TYP. 0.70 0.90 0.50 0.70 0.60 1.00 1.40 1.78 0.00 1.27 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Total Power Dissipation (TA=25° C) Total Power Dissipation (TC=25° C) Junction, Storage Temperature SYMBOL VCBO VCES VCEO VEBO IC ICP IB PD PD TJ, TSTG RATING 80 80 50 6 5 7.5 1.2 0.8 15 150, -55~150 UNIT V V V V A A A W W ° C El ECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain Transition Frequency Output Capacitance Turn-On Time Storage Time Fall Time SYMBOL BVCBO BVCES BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) h FE f T COB TON TSTG...