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MMBT2222Q - NPN Silicon Medium Power Transistor

Key Features

  • Epitaxial planar die construction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente MMBT2222Q 0.6A , 75V NPN Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Epitaxial planar die construction PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 123 A EC 4 B F G H J D K L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction and Storage Temperature VCBO VCEO VEBO IC PD TJ, TSTG REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 2.25 Max. 4.60 4.25 1.60 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. 0.40 1.50 3.00 0.32 Max. 0.58 TYP TYP 0.52 0.35 0.44 Rating 75 40 6 600 0.