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MMBTA13 - Darlington Amplifier Transistor NPN Silicon

Key Features

  • C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm.

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Elektronische Bauelemente MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12 VG FEATURES C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.