MMBTA13 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon RoHS pliant Product A suffix of "-C" specifies halogen & lead-free 1 2 COLLECTOR 3 BASE 1 EMITTER 2 Features Power dissipation PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise specified Test...