SeCoS Halbleitertechnologie GmbH MMBTA13
Darlington Amplifier Transistor NPN Silicon
| Part No. | MMBTA13 |
|---|---|
| Datasheet | MMBTA13 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | Darlington Amplifier Transistor NPN Silicon |
| Buy | Stock & Price |
FEATURES
C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mmELECTRICAL CHARACTERISTICS
Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= 100μA， IE=0 30 Collector-emitter breakdown voltage V(BR)CEO Ic= 100uA， IB=0 30 Collector-emitter breakdown voltage V(BR)EBO IE= 100μA， Ic=0 10 MAX Collector cut-off current ICBO VCB=30 V , IE=0 0.1 Emitter cut-off current DC current gain Collector-emitter saturation voltage IEBO hFE(1) * hFE(2) * VCE (sat) * VEB= 10V , IC=0 VCE=5V, IC= 10mA VCE=5V, IC= 100mA IC=100 mA, IB=0.1mA MMBTA13 MMBTA14 MMBTA13 MMBTA14 5000 10000 10000 20000 0.1 1.5 Base-emitter voltage VBE...
