Power dissipation
C B
P CM : 1 W˄Tamb=25ć˅ Collector current
I CM : 0.6 A Collector-base voltage
V (BR)CBO : 75 V Operating and storage junction temperature range
T JˈTstg: -55ć to +150ć
E
SOT-223
1. BASE 2.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Elektronische Bauelemente
RoHS Compliant Product
PZT2222A
NPN Silicon
General Purpose Transistor
C
FEATURES
Power dissipation
C B
P CM : 1 W˄Tamb=25ć˅ Collector current
I CM : 0.6 A Collector-base voltage
V (BR)CBO : 75 V Operating and storage junction temperature range
T JˈTstg: -55ć to +150ć
E
SOT-223
1. BASE 2. COLLECTOR 3.