DESCRIPTION
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 0410 = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1@ VGS=10V Pulsed Drain Current 3 TA=25°C TA=70°C ID IDM Power Dissipation TA=25°C PD Operating Junction and Storage Temperature TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 RθJA Maximum Thermal Resistance from Junction to Ambient 2 Maximum Thermal Resistance from Junction to Case 1 RθJA RθJC SOT-89 123 A EC 4 BD FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.25 2.60 1.55 TYP. 0.89 1.20 REF. G H J K L D 24 Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 1 G 3 S Rating 100 ±20 3.5 2.8 10 1.5 -65~150 t≦10s , 50 Steady State , 85 135 36 Unit V V A A A W °C °C / W °C / W °C / W 13-Sep-2017 Rev.
SeCoS Halbleitertechnologie GmbH
