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SMG1332E Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[ N-Channel Enhancement Mode Power Mos.

General Description

The SMG1332E provide the designer with best bination of fast swirching, low on-resistance and cost-effectiveness.

S 2 A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D G H J K D

Key Features

  • Simple Gate Drive.
  • 2KV ESD Rating (Per MIL-STD-883D).
  • Small Package Outline H G C J K L S Drain Gate Source All Dimension in mm D G S Absolute Maximum www. DataSheet4U. com Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Ratings Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Parameter Ratings 20 ±5 600 470 2.5 1.0 0.008 Unit V V mA mA A W W / oC o Total Power Dissipation Linear Derating.

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SMG1332E Distributor