Datasheet4U Logo Datasheet4U.com

SMG1332E - N-Channel Enhancement Mode Power MosFET

General Description

The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness.

Key Features

  • Simple Gate Drive.
  • 2KV ESD Rating (Per MIL-STD-883D).
  • Small Package Outline H G C J K L S Drain Gate Source All Dimension in mm D G S Absolute Maximum www. DataSheet4U. com Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Ratings Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Parameter Ratings 20 ±5 600 470 2.5 1.0 0.008 Unit V V mA mA A W W / oC o Total Power Dissipation Linear Derating.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness. S 2 A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D G H J K D Features * Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Package Outline H G C J K L S Drain Gate Source All Dimension in mm D G S Absolute Maximum www.DataSheet4U.