SMG1332E
SMG1332E is N-Channel Enhancement Mode Power MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS pliant Product
Description
The SMG1332E provide the designer with best bination of fast swirching, low on-resistance and cost-effectiveness.
3 Top View
SC-59 Dim A
Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40
Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80
B C D G H J
Features
- Simple Gate Drive
- 2KV ESD Rating (Per MIL-STD-883D)
- Small Package Outline
Drain Gate Source
All Dimension in mm
Absolute Maximum ..
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain...
