SMG1333 - P-Channel Enhancement Mode Power MosFET

SeCoS Halbleitertechnologie GmbH

General Description

and cost-effectiveness.

Key Features

Simple Gate Drive.
Small package outline.
Fast switching speed H G J K L Drain Gate Source S D.

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SMG1333 p-channel enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SMG1333
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	379.59 KB
Description	P-Channel Enhancement Mode Power MosFET
Datasheet	SMG1333 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMG1333 -550mA, -20V,RDS(ON) 800m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG1333 provide the designer with the best combination of fast switching, low on-resistance S 2 L 3 Top View B 1 B C D and cost-effectiveness.