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SMG138K Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SMG138K 640mA, 50V,RDS(ON) 2£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.

General Description

The SMG138K utilized advanced processing techniques to achieve the lowest possible on-resistance extremely efficient and cost-effectiveness device.

S 2 L 3 Top View B 1 B C D The SMG138K is universally used for all mercial industrial application D G C H Drain Gate Source G H J K J K L S

Key Features

  • Simple drive Requirement.
  • Small package outline D All Dimension in mm.
  • RoHS Compliant Product G Marking : 138E S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com 3 Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 ±20 640 500 950 1.38 0.01 Unit V V mA mA mA W W/ C o o Total Power Dissipation Linear Derating Fa.

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