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SMG138K - N-Channel Enhancement Mode Power MosFET

General Description

techniques to achieve the lowest possible on-resistance extremely efficient and cost-effectiveness device.

Key Features

  • Simple drive Requirement.
  • Small package outline D All Dimension in mm.
  • RoHS Compliant Product G Marking : 138E S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com 3 Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 ±20 640 500 950 1.38 0.01 Unit V V mA mA mA W W/ C o o Total Power Dissipation Linear Derating Fa.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMG138K 640mA, 50V,RDS(ON) 2£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG138K utilized advanced processing techniques to achieve the lowest possible on-resistance extremely efficient and cost-effectiveness device. S 2 L 3 Top View B 1 B C D The SMG138K is universally used for all commercial industrial application D G C H Drain Gate Source G H J K J K L S Features * Simple drive Requirement * Small package outline D All Dimension in mm * RoHS Compliant Product G Marking : 138E S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com 3 Continuous Drain Current, VGS@4.