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SMG2303 - P-Channel MosFET

General Description

The SMG2303 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Key Features

  • Super high dense cell design for extremely low RDS(ON).
  • Reliable and rugged.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2303 -1.9A, -30V,RDS(ON) 240m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description A L The SMG2303 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.