SMG2305P Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Features - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper leadframe SC-59 saves board space. - Fast switching speed. - High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless...