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SMG2305PE-C - P-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal Impedance Copper Leadframe SC-59 Saves Board Space. Fast Switching Speed. High Performance Trench Technology.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SMG2305PE P-Channel MOSFET
SMG2305P P-Channel MOSFET
SMG2305 P-Channel MosFET
SMG2305-C P-Channel Enhancement MOSFET
SMG2305A P-Channel MosFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2305PE-C -4.5 A, -20 V, RDS(ON) 43 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal Impedance Copper Leadframe SC-59 Saves Board Space. Fast Switching Speed. High Performance Trench Technology.