SMG2307PE Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
SMG2307PE Key Features
- 55 ~ 150
- 5.2 A, -20 V, RDS(ON) 31 mΩ P-Channel Enhancement MOSFET
- 0.3 -0.55
- 20 VSD
- V VDS = VGS, ID = -250µA
- Output Capacitance
- Reverse Transfer Capacitance
- Total Gate Charge
- Gate-Source Charge
- Gate-Drain Charge