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SMG2310 - N-Channel MosFET

General Description

The SMG2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Key Features

  • Simple drive requirement.
  • Small package outline.

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SMG2310A N-Channel MosFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SC-59 package is universally used for all commercial-industrial applications Features * Simple drive requirement * Small package outline Applications * Power management in Notebook Computer * Portable equipment * Battery powered system A L 3 S Top View 21 B D G C H Drain Gate Source G Marking : 2310 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@4.5V Continuous Drain Current,3 VGS@4.