SMG2313 Datasheet | SeCoS Halbleitertechnologie GmbH

Description The SMG2313 provide the designer with the best bination of fast switching,low on-resistance and cost-effectiveness. The SMG231 is universally preferred for all mercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters. Features - Small Package Outline - Simple Drive Requirement Marking: 2313 3 2 Top View 1 H Drain Gate Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -20 12 -2.5 -1.97 10 1.38 0.01 -55 ~ +150 SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 90 Unit /W http://.Se Co SGmb H. 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente -2.5A,-20V,RDS(ON) 160m P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max....