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SMG2313 Datasheet P-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SMG2313 -2.5A, -20V,RDS(ON) 160m P-Channel Enhancement Mode Power Mos.

General Description

The SMG2313 provide the designer with the best bination of fast switching,low on-resistance and cost-effectiveness.

The SMG231 is universally preferred for all mercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters.

Key Features

  • Small Package Outline.
  • Simple Drive Requirement Marking: 2313 A L S 3 2 Top View 1 B D G C H Drain Gate Source G J K D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg S Ratings -20 12 -2.5 -1.97 10 1.38 0.01 -55 ~ +150 SC-59 Dim.

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SMG2313 Distributor