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SMG2310A - N-Channel MosFET

General Description

The SMG2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SMG2310A is universally used for all commercial-industrial applications.

Key Features

  • Simple Drive Requirement, Small Package Outline Super High Density Cell Design for Extremely Low RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMG2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310A is universally used for all commercial-industrial applications. FEATURES Simple Drive Requirement, Small Package Outline Super High Density Cell Design for Extremely Low RDS(ON) MARKING CODE 3 D N-Channel Drain 3 SC-59 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.