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SMS318Y-C - N-Channel MOSFET

General Description

The SMS318Y-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Voltage Controlled Small Signal Switch.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input / Output Leakage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS318Y-C 340mA, 50V, RDS(ON) 2.5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS318Y-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS318Y-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-23 FEATURES  Advanced High Cell Density Trench Technology  Voltage Controlled Small Signal Switch  Low Input Capacitance  Fast Switching Speed  Low Input / Output Leakage MARKING SS. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.