Download SSD25N10-C Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSD25N10-C
SSD25N10-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION The SSD25N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD25N10-C meet the Ro HS and Green Product requirement with full function reliability approved. FEATURES - Advanced high cell density Trench technology - Super Low Gate Charge - Green Device Available MARKING 25N10   = Date Code PACKAGE INFORMATION Package TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Drain Part Number SSD25N10-C Type Lead (Pb)-free and Halogen-free Gate TO-252(D-Pack) Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.9...