SSD25N10
SSD25N10 is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
The SSD25N10 meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
25N10
Date Code
PACKAGE INFORMATION
Package
TO-252
2.5K
Gate
Leader Size 13 inch
Drain
Source
TO-252(D-Pack)
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 6.35 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89...
