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SSD25N10 - N-Ch Enhancement Mode Power MOSFET

Description

The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.

The SSD25N10 meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

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Datasheet preview – SSD25N10

Datasheet Details

Part number SSD25N10
Manufacturer SeCoS
File Size 226.20 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSD25N10 Datasheet
Additional preview pages of the SSD25N10 datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSD25N10 25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD25N10 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max.
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