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SSG4407J-C - P-Channel Enhancement Mode Power MosFET

General Description

The SSG4407J-C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Key Features

  • Simple Drive Requirement.
  • Lower On-Resistance.
  • Low Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG4407J-C -11A, -30V, RDS(ON) 15mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4407J-C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications SOP-8 B FEATURES  Simple Drive Requirement  Lower On-Resistance  Low Gate Charge MARKING Q4407  Q4407S  = Production Line Indication = Production Line Indication PACKAGE INFORMATION Package MPQ SOP-8 4K Leader Size 13 inch A H G LD M C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min.