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SSG4407 - P-Channel Enhancement Mode Power MosFET

General Description

The SSG4407 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Lower On-Resistance.
  • Simple Drive Requirement.
  • Fast Switching Characteristic DDDD 8 765 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.375 REF 3.80 4.00 0.35 1.27 Typ. 0.49 4.80 0.10 0.25 5.00 o 0 1.35 1.75 o 8 Dimensions in millimeters D Date Code 4407SC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction a.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente Description SSG4407 -10.7A, -30V,RDS(ON) 14m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 The SSG4407 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. Features * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristic DDDD 8 765 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.375 REF 3.80 4.00 0.35 1.27 Typ. 0.49 4.80 0.10 0.25 5.00 o 0 1.35 1.