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SSG4403 - P-Ch Enhancement Mode Power MOSFET

General Description

The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V.

The device is suitable for use as a load switch or in PWM applications.

Key Features

  • Low Gate Charge Lower On-resistance Fast Switching Characteristic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG4403 P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. FEATURES Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS DD D D 8765 4403SC = Date Code Gate 123 4 SS SG ABSOLUTE MAXIMUM RATINGS Drain Source B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF.