SST3439E-C - N&P-Ch Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie GmbH

Key Features

A suffix of “-C” specifies halogen & lead-free.
Trench Power LV MOSFET Technology.
High Dense Cell Design for Low RDS(on).
High Speed Switching.
ESD Protected Up to 2.0KV (HBM) SOT-26.

SST3439E-C n&p-ch enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SST3439E-C
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	635.19 KB
Description	N&P-Ch Enhancement Mode Power MOSFET
Datasheet	SST3439E-C Datasheet

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Full PDF Text Transcription (Reference)

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Elektronische Bauelemente SST3439E-C 0.5A, 20V, RDS(ON) 280m -0.5A, -20V, RDS(ON) 850m N&P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product FEATURES A suffix of “-C” specifies halogen & lead-free  Trench Power LV MOSFET Technology  High Dense Cell Design for Low RDS(on)  High Speed Switching  ESD Protected Up to 2.