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STT3423P - P-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • F DG K C H J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E TSOP-6 L B FEATURES     F DG K C H J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. REF.