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STT3434 - N-Channel MOSFET

General Description

The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The TSOP-6 package is universally used for all commercial-industrial surface mount applications.

REF.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 θ b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.