STT3470N Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. 6 5 4 TSOP-6 Features - DG - - - Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe...