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STT3471P - P-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. B F DG 1 2 3 C K H J.

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Datasheet Details

Part number STT3471P
Manufacturer SeCoS
File Size 155.92 KB
Description P-Channel MOSFET
Datasheet download datasheet STT3471P Datasheet

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Full PDF Text Transcription

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STT3471P Elektronische Bauelemente -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. A E 6 5 4 TSOP-6 L FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. B F DG 1 2 3 C K H J APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF.
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