STT3520C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. Features - Low RDS(on) Provides Higher Efficiency And Extends Battery Life. - Miniature...