STT3599C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. TSOP-6 Features - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper...