Datasheet4U Logo Datasheet4U.com

BSW66A - Bipolar NPN Device

📥 Download Datasheet

Datasheet preview – BSW66A

Datasheet Details

Part number BSW66A
Manufacturer Seme LAB
File Size 10.46 KB
Description Bipolar NPN Device
Datasheet download datasheet BSW66A Datasheet
Additional preview pages of the BSW66A datasheet.

📁 Similar Datasheet

  • BSW66A - NPN transistors (NXP)
  • BSW66A - NPN SILICON TRANSISTOR (Motorola)
  • BSW66 - NPN transistors (NXP)
  • BSW6620 - Ultra High Isolation SPDT RF Switch (BeRex)
  • BSW6622 - Ultra High Isolation SPDT RF Switch (BeRex)
  • BSW6321 - High Linearity / Fast Switching SPDT RF switch (BeRex)
  • BSW6420 - High Isolation Absorptive SPDT RF switch (BeRex)
  • BSW6440 - High Isolation Absorptive SP4T RF Switch (BeRex)
  • BSW67 - NPN transistors (NXP)
  • BSW67A - NPN transistors (NXP)
Other Datasheets by Seme LAB
  • BSW66 - Bipolar NPN Device
  • BSW67 - Bipolar NPN Device
  • BSW67A - Bipolar NPN Device
  • BSW68A - Bipolar NPN Device

Full PDF Text Transcription

Click to expand full text
BSW66A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 100V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 5/0.5 (VCE / IC) * Maximum Working Voltage Min. 30 Typ. 130M Max. 100 2 5 Units V A Hz W This is a shortform datasheet.
Published: |