BUL50A Datasheet NPN Transistor

Manufacturer: Seme LAB

Overview: LAB MECHANICAL DATA Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) SEME BUL50A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR • • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO–247 Pin 1 – Base Pad 2 – Collector 15.2 max 14 2.0 4.6 max Pad 3 – Emitter 4.

Datasheet Details

Part number	BUL50A
Manufacturer	Seme LAB
File Size	29.20 KB
Description	NPN Transistor
Datasheet	BUL50A_SemeLAB.pdf

Key Features

21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3.
Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages. 13.6 min 5.5 11 1.15 0.95 0.4 1.6 SOT93 Pin 1.
Base Pad 2.
Collector Pad 3.

BUL50A Distributor

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