• Part: BUL50A
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Seme LAB
  • Size: 29.20 KB
Download BUL50A Datasheet PDF
Seme LAB
BUL50A
BUL50A is NPN Transistor manufactured by Seme LAB.
FEATURES 21.0 max 12.7 max 4.25 Dia. 4.15 - Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. - Ion implant and high accuracy masking for tight control of characteristics from batch to batch. - Triple Guard Rings for improved control of high voltages. 13.6 min 5.5 11 1.15 0.95 0.4 1.6 SOT93 Pin 1 - Base Pad 2 - Collector Pad 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk 1000V 500V 10V 15A 30A 5A 125W - 55 to +175°C Prelim. 3/95 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME Test Conditions Min. 500 1000 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 100m A...