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BUL50A - NPN Transistor

Key Features

  • 21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3.
  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages. 13.6 min 5.5 11 1.15 0.95 0.4 1.6 SOT93 Pin 1.
  • Base Pad 2.
  • Collector Pad 3.

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Datasheet Details

Part number BUL50A
Manufacturer Seme LAB
File Size 29.20 KB
Description NPN Transistor
Datasheet download datasheet BUL50A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LAB MECHANICAL DATA Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) SEME BUL50A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR • • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO–247 Pin 1 – Base Pad 2 – Collector 15.2 max 14 2.0 4.6 max Pad 3 – Emitter 4.