BUL52B Datasheet NPN Transistor

Manufacturer: Seme LAB

Overview: LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 2.54 2.

Datasheet Details

Part number	BUL52B
Manufacturer	Seme LAB
File Size	19.86 KB
Description	NPN Transistor
Datasheet	BUL52B_SemeLAB.pdf

Key Features

TO220.
Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages. Pin 1.
Base Pin 2.
Collector Pin 3.
Emitter.

BUL52B Distributor

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