BUL52B Description
LAB Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia.
BUL52B Key Features
- Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ra
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Triple Guard Rings for improved control of high voltages
- Collector
- Emitter