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BUL52 Datasheet NPN Transistor

Manufacturer: Seme LAB

Overview: LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 2.54 2.

Datasheet Details

Part number BUL52
Manufacturer Seme LAB
File Size 19.86 KB
Description NPN Transistor
Datasheet BUL52_SemeLAB.pdf

Key Features

  • TO220.
  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages. Pin 1.
  • Base Pin 2.
  • Collector Pin 3.
  • Emitter.

BUL52 Distributor

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