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BUL70A - NPN Transistor

Key Features

  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages. SOT-223 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Pin 4 - Collector.

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Datasheet Details

Part number BUL70A
Manufacturer Seme LAB
File Size 21.09 KB
Description NPN Transistor
Datasheet download datasheet BUL70A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LAB MECHANICAL DATA Dimensions in mm 0.32 0.24 SEME BUL70A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13° 0.10 0.02 16° max. 1.70 max. 10° max. 6.7 6.3 3.1 2.9 Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING • SURFACE MOUNT FOOT PRINT 4 3.7 7.3 3.3 6.7 1 2 3 1.05 0.85 2.30 4.60 0.80 0.60 FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages.