BUL70A Datasheet | Seme LAB

FEATURES - Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. - Ion implant and high accuracy masking for tight control of characteristics from batch to batch. - Triple Guard Rings for improved control of high voltages. SOT-223 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Pin 4 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage(IE=0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1000V 500V 10V 4A 7A 2A 3W - 55 to +150°C Prelim. 2/97 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME Test Conditions Min. 500 1000 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 10m A Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut- Off Current Collector - Emitter Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A VCB = 1000V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 0.1A IC = 0.5A IC = 1A IC = 100m A TC = 125°C VCE = 5V VCE = 5V VCE = 1V TC = 125°C IB = 20m A IB = 0.1A IB = 0.2A IB = 0.1A IB = 0.2A VCE = 4V f = 1MHz VCE = 500V V 10 100 100 10 100 µA µA µA 20 9 5 30 15 8 0.05 0.15 0.3 0.8 0.9 20 20 0.1 0.2 0.5 1 1.1 V...