BUL70A Description
LAB Dimensions in mm 0.32 0.24 SEME BUL70A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13° 0.10 0.02 16° max.
BUL70A Key Features
- Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ra
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Triple Guard Rings for improved control of high voltages
- Base Pin 2
- Collector Pin 3
- Emitter Pin 4
- Collector
BUL70A Applications
- SEMEFAB DESIGNED AND DIFFUSED DIE