Datasheet Details
| Part number | BUL705 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 269.23 KB |
| Description | High voltage fast-switching NPN Power Transistor |
| Datasheet |
 BUL705 Datasheet
|
|
|
General Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Key Features
- NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220.