BUL704 Overview
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Internal schematic diagram Applications Electronic ballast for fluorescent lighting Dedicated for PFC solution in HF ballast halfbridge voltage fed Order...
BUL704 Key Features
- NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation